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SiC Diode Test Data
Fabricated SiC diodes are tested in the temperature range of 300 degrees C to 600 degrees C.
Gilbert, G. Sandia National Laboratories
Aug 01, 2014
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Pressure Sensor and Telemetry Methods for Measurement while Drilling in Geothermal Wells
Project status report as of end of 2011. Key milestones and accomplishments in the year 2011 include:
Proof of feasibility of analog and digital components with their lifetime tested for more than 500 hours at 300 degrees C,
Demonstration of ceramic-based packaging capable of su...
Vert, A. GE Global Research
Jan 01, 2012
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