SiC Diode Test Data

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Fabricated SiC diodes are tested in the temperature range of 300 degrees C to 600 degrees C.

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TY - DATA AB - Fabricated SiC diodes are tested in the temperature range of 300 degrees C to 600 degrees C. AU - Gilbert, Gregorz DB - Geothermal Data Repository DP - Open EI | National Renewable Energy Laboratory DO - 10.15121/1157514 KW - geothermal KW - SiC KW - diode KW - test KW - high temp KW - egs LA - English DA - 2014/08/01 PY - 2014 PB - Sandia National Laboratories T1 - SiC Diode Test Data UR - https://doi.org/10.15121/1157514 ER -
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Gilbert, Gregorz. SiC Diode Test Data. Sandia National Laboratories, 1 August, 2014, Geothermal Data Repository. https://doi.org/10.15121/1157514.
Gilbert, G. (2014). SiC Diode Test Data. [Data set]. Geothermal Data Repository. Sandia National Laboratories. https://doi.org/10.15121/1157514
Gilbert, Gregorz. SiC Diode Test Data. Sandia National Laboratories, August, 1, 2014. Distributed by Geothermal Data Repository. https://doi.org/10.15121/1157514
@misc{GDR_Dataset_441, title = {SiC Diode Test Data}, author = {Gilbert, Gregorz}, abstractNote = {Fabricated SiC diodes are tested in the temperature range of 300 degrees C to 600 degrees C.}, url = {https://gdr.openei.org/submissions/441}, year = {2014}, howpublished = {Geothermal Data Repository, Sandia National Laboratories, https://doi.org/10.15121/1157514}, note = {Accessed: 2025-05-11}, doi = {10.15121/1157514} }
https://dx.doi.org/10.15121/1157514

Details

Data from Aug 1, 2014

Last updated Aug 8, 2017

Submitted Sep 2, 2014

Organization

Sandia National Laboratories

Contact

Gregorz Gilbert Cieslewski

Authors

Gregorz Gilbert

Sandia National Laboratories

DOE Project Details

Project Lead Lauren Boyd

Project Number FY14 AOP 1.1.5.1

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