SiC Diode Test Data
DOI
10.15121/1157514
Publicly accessible
License
Fabricated SiC diodes are tested in the temperature range of 300 degrees C to 600 degrees C.
Citation Formats
Sandia National Laboratories. (2014). SiC Diode Test Data [data set]. Retrieved from https://dx.doi.org/10.15121/1157514.
Gilbert, Gregorz. SiC Diode Test Data. United States: N.p., 01 Aug, 2014. Web. doi: 10.15121/1157514.
Gilbert, Gregorz. SiC Diode Test Data. United States. https://dx.doi.org/10.15121/1157514
Gilbert, Gregorz. 2014. "SiC Diode Test Data". United States. https://dx.doi.org/10.15121/1157514. https://gdr.openei.org/submissions/441.
@div{oedi_441, title = {SiC Diode Test Data}, author = {Gilbert, Gregorz.}, abstractNote = {Fabricated SiC diodes are tested in the temperature range of 300 degrees C to 600 degrees C.}, doi = {10.15121/1157514}, url = {https://gdr.openei.org/submissions/441}, journal = {}, number = , volume = , place = {United States}, year = {2014}, month = {08}}
https://dx.doi.org/10.15121/1157514
Details
Data from Aug 1, 2014
Last updated Aug 8, 2017
Submitted Sep 2, 2014
Organization
Sandia National Laboratories
Contact
Gregorz Gilbert Cieslewski
Authors
DOE Project Details
Project Lead Lauren Boyd
Project Number FY14 AOP 1.1.5.1
