SiC Diode Test Data
DOI
10.15121/1157514
Publicly accessible
License
Fabricated SiC diodes are tested in the temperature range of 300 degrees C to 600 degrees C.
Citation Formats
TY - DATA
AB - Fabricated SiC diodes are tested in the temperature range of 300 degrees C to 600 degrees C.
AU - Gilbert, Gregorz
DB - Geothermal Data Repository
DP - Open EI | National Renewable Energy Laboratory
DO - 10.15121/1157514
KW - geothermal
KW - SiC
KW - diode
KW - test
KW - high temp
KW - egs
LA - English
DA - 2014/08/01
PY - 2014
PB - Sandia National Laboratories
T1 - SiC Diode Test Data
UR - https://doi.org/10.15121/1157514
ER -
Gilbert, Gregorz. SiC Diode Test Data. Sandia National Laboratories, 1 August, 2014, Geothermal Data Repository. https://doi.org/10.15121/1157514.
Gilbert, G. (2014). SiC Diode Test Data. [Data set]. Geothermal Data Repository. Sandia National Laboratories. https://doi.org/10.15121/1157514
Gilbert, Gregorz. SiC Diode Test Data. Sandia National Laboratories, August, 1, 2014. Distributed by Geothermal Data Repository. https://doi.org/10.15121/1157514
@misc{GDR_Dataset_441,
title = {SiC Diode Test Data},
author = {Gilbert, Gregorz},
abstractNote = {Fabricated SiC diodes are tested in the temperature range of 300 degrees C to 600 degrees C.},
url = {https://gdr.openei.org/submissions/441},
year = {2014},
howpublished = {Geothermal Data Repository, Sandia National Laboratories, https://doi.org/10.15121/1157514},
note = {Accessed: 2025-05-31},
doi = {10.15121/1157514}
}
https://dx.doi.org/10.15121/1157514
Details
Data from Aug 1, 2014
Last updated Aug 8, 2017
Submitted Sep 2, 2014
Organization
Sandia National Laboratories
Contact
Gregorz Gilbert Cieslewski
Authors
DOE Project Details
Project Lead Lauren Boyd
Project Number FY14 AOP 1.1.5.1
