SiC Diode High Temperature Test Data
DOI
10.15121/1157514
Publicly accessible
License
Fabricated SiC diodes are tested in the temperature range of 300 degrees C to 600 degrees C.
Citation Formats
TY - DATA
AB - Fabricated SiC diodes are tested in the temperature range of 300 degrees C to 600 degrees C.
AU - Gilbert, Gregorz
DB - Geothermal Data Repository
DP - Open EI | National Laboratory of the Rockies
DO - 10.15121/1157514
KW - geothermal
KW - SiC
KW - diode
KW - test
KW - high temp
KW - egs
LA - English
DA - 2014/08/01
PY - 2014
PB - Sandia National Laboratories
T1 - SiC Diode High Temperature Test Data
UR - https://doi.org/10.15121/1157514
ER -
Gilbert, Gregorz. SiC Diode High Temperature Test Data. Sandia National Laboratories, 1 August, 2014, Geothermal Data Repository. https://doi.org/10.15121/1157514.
Gilbert, G. (2014). SiC Diode High Temperature Test Data. [Data set]. Geothermal Data Repository. Sandia National Laboratories. https://doi.org/10.15121/1157514
Gilbert, Gregorz. SiC Diode High Temperature Test Data. Sandia National Laboratories, August, 1, 2014. Distributed by Geothermal Data Repository. https://doi.org/10.15121/1157514
@misc{GDR_Dataset_441,
title = {SiC Diode High Temperature Test Data},
author = {Gilbert, Gregorz},
abstractNote = {Fabricated SiC diodes are tested in the temperature range of 300 degrees C to 600 degrees C.},
url = {https://gdr.openei.org/submissions/441},
year = {2014},
howpublished = {Geothermal Data Repository, Sandia National Laboratories, https://doi.org/10.15121/1157514},
note = {Accessed: 2026-09-09},
doi = {10.15121/1157514}
}
https://dx.doi.org/10.15121/1157514
Details
Data from Aug 1, 2014
Last updated Jul 17, 2026
Submitted Sep 2, 2014
Organization
Sandia National Laboratories
Contact
Gregorz Gilbert Cieslewski
Authors
DOE Project Details
Project Lead Lauren Boyd
Project Number FY14 AOP 1.1.5.1
