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SiC Diode Test Data

Fabricated SiC diodes are tested in the temperature range of 300 degrees C to 600 degrees C.
Gilbert, G. Sandia National Laboratories
Aug 01, 2014
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Pressure Sensor and Telemetry Methods for Measurement while Drilling in Geothermal Wells

Project status report as of end of 2011. Key milestones and accomplishments in the year 2011 include: Proof of feasibility of analog and digital components with their lifetime tested for more than 500 hours at 300 degrees C, Demonstration of ceramic-based packaging capable of su...
Vert, A. GE Global Research
Jan 01, 2012
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Harsh Environment Sensors for Geothermal Applications

Technical papers detailing the development of harsh environment sensors for geothermal applications. Principle Investigator is Prof. Albert P. Pisano (University of California, Berkeley). Submission includes a paper about geothermal environmental exposure testing on encapsulant a...
Senesky, D. et al Regents of the University University of California
Jan 01, 2012
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